Insilicon Corp Sample Contracts

TABLE OF CONTENTS
Loan and Security Agreement • February 14th, 2000 • Insilicon Corp • Semiconductors & related devices
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TABLE OF CONTENTS
Contribution Agreement • February 14th, 2000 • Insilicon Corp • Semiconductors & related devices • California
UNDERWRITING AGREEMENT
Underwriting Agreement • March 20th, 2000 • Insilicon Corp • Semiconductors & related devices • New York
SHARE PURCHASE AGREEMENT
Share Purchase Agreement • December 29th, 2000 • Insilicon Corp • Semiconductors & related devices • Ontario
RECITALS
Registration Rights Agreement • December 29th, 2000 • Insilicon Corp • Semiconductors & related devices • California
RECITALS
Indemnification Agreement • February 14th, 2000 • Insilicon Corp • Semiconductors & related devices • Delaware
RECITALS
Tax-Sharing Agreement • February 14th, 2000 • Insilicon Corp • Semiconductors & related devices • California
TENDER AND VOTING AGREEMENT PHOENIX TECHNOLOGIES LTD.
Tender and Voting Agreement • July 24th, 2002 • Insilicon Corp • Semiconductors & related devices • Delaware

THIS TENDER AND VOTING AGREEMENT (this “Agreement”) is made and entered into as of July 23, 2002 by and between Synopsys, Inc., a Delaware corporation (“Parent”), and the undersigned stockholder (the “Stockholder”) of inSilicon Corporation, a Delaware corporation (the “Company”).

BABU CHILUKURI ANAND NAIDU AJIT DEORA
Agreement and Plan of Reorganization • January 13th, 2000 • Insilicon Corp • California
AMENDED AND RESTATED INITIAL PUBLIC OFFERING AGREEMENT dated as of March 15, 2000
Initial Public Offering Agreement • March 20th, 2000 • Insilicon Corp • Semiconductors & related devices • California
AGREEMENT AND PLAN OF MERGER by and among SYNOPSYS, INC. FERRITE ACQUISITION CORP. and INSILICON CORPORATION Dated as of July 23, 2002
Agreement and Plan of Merger • July 24th, 2002 • Insilicon Corp • Semiconductors & related devices • Delaware

THIS AGREEMENT AND PLAN OF MERGER (this “Agreement”) is made and entered into as of July 23, 2002 by and among Synopsys, Inc., a Delaware corporation (“Parent”), Ferrite Acquisition Corp., a Delaware corporation and a wholly-owned subsidiary of Parent (“Merger Sub”), and inSilicon Corporation, a Delaware corporation (the “Company”). Unless otherwise defined herein, all capitalized terms used in this Agreement shall have the respective meanings ascribed thereto in Article IX hereof.

RECITALS
Registration Rights Agreement • February 14th, 2000 • Insilicon Corp • Semiconductors & related devices • California
R E C I T A L S
Key Executive Officer Severance Agreement • February 14th, 2000 • Insilicon Corp • Semiconductors & related devices • California
EXECUTIVE OFFICER SEVERANCE AGREEMENT
Executive Officer Severance Agreement • August 6th, 2002 • Insilicon Corp • Semiconductors & related devices • California

This Executive Officer Severance Agreement (the “Agreement”) dated, September 29, 2000 (“Effective Date”), and is by and between Joseph E. Hustein (the “Executive”), an individual currently residing at 909 Addison Avenue, Palo Alto, CA 94301 and inSilicon Corporation, a Delaware corporation (the “Company”), with its principal place of business at 411 East Plumeria Drive, San Jose, CA 95134

CONFIDENTIALITY AGREEMENT May 24, 2001
Confidentiality Agreement • August 6th, 2002 • Insilicon Corp • Semiconductors & related devices • California
RESTATED EXECUTIVE OFFICER SEVERANCE AGREEMENT
Executive Officer Severance Agreement • August 6th, 2002 • Insilicon Corp • Semiconductors & related devices • California

THIS RESTATED EXECUTIVE OFFICER SEVERANCE AGREEMENT (the “Agreement”) is effective as of April 1, 2002 (“Effective Date”), and is by and between BARRY HOBERMAN (the “Executive”), an individual currently residing at 10290 Palo Vista, Cupertino, CA 95014-2713 and INSILICON CORPORATION, a Delaware corporation (the “Company”), with its principal place of business at 411 East Plumeria Drive, San Jose, CA 95134.

RECITALS
Services and Cost-Sharing Agreement • February 14th, 2000 • Insilicon Corp • Semiconductors & related devices • California
Form of Indemnification Agreement between inSilicon Corporation and each of its Officers and Directors INDEMNITY AGREEMENT
Indemnity Agreement • July 23rd, 2002 • Insilicon Corp • Semiconductors & related devices • Delaware

This Indemnity Agreement, dated as of , is made by and between inSilicon Corporation, a Delaware corporation (the “Company”), and the undersigned director and/or executive officer of the Company (the “Indemnitee”).

TERMINATION AND AMENDMENT OF INTERCOMPANY AGREEMENTS AGREEMENT
Of Intercompany Agreements Agreement • August 6th, 2002 • Insilicon Corp • Semiconductors & related devices • California

This TERMINATION AND AMENDMENT OF INTERCOMPANY AGREEMENTS AGREEMENT (this “Agreement”), dated as of July 23, 2002, by and among Synopsys, Inc., a Delaware corporation (“Synopsys”), inSilicon Corporation, a Delaware corporation (“inSilicon”) and Phoenix Technologies Ltd., a Delaware corporation (“Phoenix”). All capitalized terms used but not defined herein shall have the meanings ascribed to them in the Services Agreement (as defined below).

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