Process variability simulations Sample Clauses

Process variability simulations. Sentaurus Device simulations are taken as the reference device simulations. Sentaurus Device is used for all of the “uniform” simulations, i.e. those that do not include sources of statistical variability. To capture the effects of the process variations across the DoE, Sentaurus Device simulations of the required ID-VD and ID-VG characteristics are run at each point in the DoE. The minimum requirement of I-V characteristics for uniform compact model extraction are ID-VG characteristics at low (VD=0.05V) and high (VD=0.9V) drain bias, and full ID-VD characteristics at multiple gate biases. These I-V characteristics produced at each point in the DoE will be sufficient for the extraction of process-variability-aware compact models. In Figure 5 we present an analysis of the effects of varying each individual process parameter on key figures of merit (FoM). Here the blue lines show the effect of xGe, the orange lines show dsadp and the yellow lines show Fgate. Each line has three data points with the centre point representing the nominal parameter value, while the left and right points respectively represent the negative (-ve) and positive (+ve) variation in parameter value, as provided in Table 1. Compared to the trends observed in Deliverable D5.4, the larger variations applied to xGe, and dsadp here overcome the noise present in the previous results, leading to more consistent trends. The “V”-shaped response to Fgate, that was analysed in detail in D5.4, remains
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